Gate Driver Design for 1.7kV SiC MOSFET Module with Rogowski Current Sensor for Short-circuit Protection
This paper compares different configurations and proposes a best power architecture for dv/dt immunity, as shown in Fig. 1. On the basis of these findings, the driver IC is selected from a number of candidates. Next the external current booster, soft turn-off and active Miller clamp circuitry are designed for the selected driver IC. A conventional desaturation short circuit protection circuit is kept in the circuit design, but an aditional short-circuit protection circuit based on the Rogowski current sensor on the PCB board is added for effective protection. The test results obtained from the experimental setup (shown in Fig. 2) show that all the designed circuitry has good performance for device driving and protection.